Selector Devices: Voltage‐Tunable Ultra‐Steep Slope Atomic Switch with Selectivity over 1010 (Small 29/2021)
Source abstract
Abstract
In article number 2100401, Jang-Sik Lee and co-workers report an atomic switch selector device with a multilayer structure for cross-point memory array architecture. The multilayer structure enables the formation of controlled filaments by preventing excessive influx of silver ions, resulting in ten-billion on and off difference and high on-current density for ultra-high-density memory.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Advanced Memory and Neural Computing · Distributed systems and fault tolerance · Electronic and Structural Properties of Oxides
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Affiliations
Department of Materials Science and Engineering Pohang University of Science and Technology (POSTECH) Pohang 37673 Korea
References
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