Few‐Layer MoS2: Atomic‐Scale Fabrication of In‐Plane Heterojunctions of Few‐Layer MoS2 via In Situ Scanning Transmission Electron Microscopy (Small 3/2020)
Source abstract
Abstract
In article number 1905516, Wen-Wei Wu and co-workers fabricate the hybrids of heterojunctions of few-layer MoS2 in terms of diverse layer variation and stacking configuration, through in-situ scanning/transmission electron microscopy heating. The salient dynamics inherent in few-layer MoS2 are investigated and first observed at the atomic scale, including scrolling, folding, etching, and restructuring. These structures set the stage for further quantum investigation and energy harvesting.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: 2D Materials and Applications
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Affiliations
Department of Materials Science and Engineering National Chiao Tung University Hsinchu 300 Taiwan
Material and Chemical Research Laboratories Nanotechnology Research Center Industrial Technology Research Institute Hsinchu 310 Taiwan
Department of Materials University of Oxford OX1 2JD Oxford UK
Frontier Research Center on Fundamental and Applied Sciences of Matters National Tsing Hua University Hsinchu City 300 Taiwan
Center for the Intelligent Semiconductor Nano‐system Technology Research National Chiao Tung University Hsinchu 300 Taiwan
References
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