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journal article·2019-05Open access

Single‐Crystal Graphene Wafers: Epitaxial Growth of 6 in. Single‐Crystalline Graphene on a Cu/Ni (111) Film at 750 °C via Chemical Vapor Deposition (Small 22/2019)

Xuefu Zhang, Tianru Wu, Qi Jiang, Huishan Wang, Hailong Zhu, Zhiying Chen, Ren Jiang, Tianchao Niu, Zhuojun Li, Youwei Zhang, Zhijun Qiu, Guanghui Yu, Ang Li, Shan Qiao, Haomin Wang, Qingkai Yu, Xiaoming Xie

Small· Volume 15· Issue 22
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Source abstract

Abstract

Single-crystal graphene wafers (SCGWs) are an essential requirement for graphene's scalable utilization in electronics' circuits. In article number 1805395, Xiaoming Xie and co-workers grow high quality 6 in. SCGWs by chemical vapor deposition on a unique (111) Cu85Ni15 substrate at 750 °C, taking advantage of the ultra-flat single crystalline Cu/Ni substrate and nickel's high catalytic power.
Source: openalex_inverted_index · Quality: baseline

Research context

NanomaterialsCatalysis & surfacesMaterials processing

OpenAlex topics: Graphene research and applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai 200050 China

Chinese Academy of Sciences Center for Excellence in Superconducting Electronics (CENSE) 865 Chang Ning Road Shanghai 200050 China

University of Chinese Academy of Sciences Beijing 100049 China

Department of Physics East China Normal University Shanghai 200241 China

Herbert Gleiter Institute of Nanoscience College of Materials Science and Engineering Nanjing University of Science and Technology Nanjing 210094 China

State Key Laboratory of ASIC and System School of Information Science and Technology Fudan University Shanghai 200433 China

School of Physical Science and Technology Shanghai Tech University Shanghai 200031 China

References

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