Secure Electronics: Physically Transient Threshold Switching Device Based on Magnesium Oxide for Security Application (Small 27/2018)
Source abstract
Abstract
In article number 1800945, Xiaohua Ma, Yue Hao, and co-workers achieve super-large storage capacity of 107 Gb by integrating transient threshold switching devices with dissolvable memristors on flexible substrate. This transient system is designed to physically disappear when met with aqueous solutions or biofluids for a certain amount of time after completing the specific function, which possesses great potential to be applied in secure storage systems.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Advanced Memory and Neural Computing
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Affiliations
School of Advanced Materials and Nanotechnology Xidian University Xi'an 710126 China
Key Laboratory of Wide Band Gap Semiconductor Technology Xidian University Xi'an 710071 China
School of Microelectronics Xidian University Xi'an 710071 China
References
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