Charge-Trap Memory: Eliminating Overerase Behavior by Designing Energy Band in High-Speed Charge-Trap Memory Based on WSe₂ (Small 17/2017)

In article number 1604128, by Jianlu Wang, Peng Zhou, and David Wei Zhang, and co-workers, by combining two-dimensional material WSe2 and a three-dimensional Al2O3/HfO2/Al2O3 charge-trap stack, a charge-trap memory without a fatal overerase issue is achieved. State of the art values for flash memory based on two-dimensional materials are reported. The write time is significantly enhanced to 1 μs while the memory only captures electrons with a large electron memory window over 20 V and trap selectivity of about 13.