DataVXSmallPaper
journal article·2016-08Open access

Graphene: Effects of Pb Intercalation on the Structural and Electronic Properties of Epitaxial Graphene on SiC (Small 29/2016)

Ayhan Yurtsever, Jo Onoda, Takushi Iimori, Kohei Niki, Toshio Miyamachi, Masayuki Abe, Seigi Mizuno, Satoru Tanaka, Fumio Komori, Yoshiaki Sugimoto

Small· Volume 12· Issue 29
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Source abstract

Abstract

On page 3956, A. Yurtsever and co-workers demonstrate a novel method to obtain a p-doped graphene layer on SiC (0001) substrate by Pb atom intercalation. The Pb intercalated structure is found to be stable in ambient conditions and at high temperatures up to 1250 °C. It is shown that electronic properties of graphene can be greatly tuned by Pb intercalation on SiC, which can facilitate the use of graphene in the various fields such as superconductivity and spintronics.
Source: openalex_inverted_index · Quality: baseline

Research context

Nanomaterials

OpenAlex topics: Graphene research and applications

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Affiliations

Graduate School of Engineering Science Osaka University 1‐3 Machikaneyama Toyonaka Osaka 560‐8531 Japan

The Institute of Scientific and Industrial Research Osaka University 8‐1 Mihogaoka Ibaraki Osaka 567‐0047 Japan

Graduate School of Engineering Osaka University 2‐1 Yamada Oka, Suita Osaka 565‐0871 Japan

Department of Advanced Materials Science Graduate School of Frontier Sciences The University of Tokyo 5‐1‐5 Kashiwanoha Kashiwa Chiba 277‐8561 Japan

The Institute for Solid State Physics The University of Tokyo 5‐1‐5 Kashiwanoha Kashiwa Chiba 277‐8581 Japan

Department of Molecular and Material Sciences Kyushu University Kasuga Fukuoka 816‐8580 Japan

Department of Applied Quantum Physics and Nuclear Engineering Kyushu University Fukuoka 819‐0395 Japan

References

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