Resistive Switching: Physically Transient Resistive Switching Memory Based on Silk Protein (Small 20/2016)
Source abstract
Abstract
On page 2715, physically transient resistive switching memory based on silk fibroin is demonstrated by Y. Hao, X. Chen, and co-workers. The memory devices can be absolutely dissolved in deionized water or phosphate-buffered saline in 2 hours. The transient devices have the potential for application in secure data storage systems and biocompatible electronics.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Advanced Memory and Neural Computing
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Affiliations
School of Advanced Materials and Nanotechnology Key Laboratory of Wide Band Gap Semiconductor Technology Xidian University Xi'an 710071 China
School of Materials Science and Engineering Nanyang Technological University 50 Nanyang Avenue Singapore 639798
References
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