Edge‐Cutting Transfer: Deterministic Assembly of Flexible Si/Ge Nanoribbons via Edge‐Cutting Transfer and Printing for van der Waals Heterojunctions (Small 33/2015)
Source abstract
Abstract
A combined and controlled approach called edge-cutting transfer (E-CT) is used on page 4140 by Y. Mei, Z. Di, and co-workers to precisely generate spatially aligned Si/Ge nanoribbons with a designed geometry. The suspended nanoribbons are formed by the selective etching of a buried oxide layer, then a slab of cured PDMS is contacted with the patterned donor source. Pulling away the PDMS cuts the suspended Si/Ge nanoribbons off the substrate in a controllable manner, obtaining Si/Ge nanoribbon arrays on a flexible PDMS substrate.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Nanowire Synthesis and Applications · Silicon Nanostructures and Photoluminescence · Quantum Dots Synthesis And Properties
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Affiliations
State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai 200050 P. R. China
Department of Materials Science Fudan University Shanghai 200433 P. R. China
References
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