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journal article·2024-11Open access

Advancements and Challenges in the Integration of Indium Arsenide and Van der Waals Heterostructures (Small 48/2024)

Tiantian Cheng, Yuxin Meng, Man Luo, Jiachi Xian, Wenjin Luo, Weijun Wang, Fangyu Yue, Johnny C. Ho, Chenhui Yu, Junhao Chu

Small· Volume 20· Issue 48
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Source abstract

Abstract

Van der Waals Heterostructures In article number 2403129, Man Luo, Johnny C. Ho, Chenhui Yu, and co-workers review advancements in integrating low-dimensional InAs-based materials with van der Waals systems. They propose innovative approaches such as selective area growth, remote epitaxy, multifunctional applications, and incorporating deep learning into first-principles calculations to overcome challenges and drive transformative progress in the field.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: 2D Materials and Applications · Inorganic Chemistry and Materials · Quantum Dots Synthesis And Properties

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Affiliations

School of Microelectronics and School of Integrated Circuits School of Information Science and Technology Nantong University Nantong 226019 P. R. China

Department of Materials Science and Engineering and State Key Laboratory of Terahertz and Millimeter Waves City University of Hong Kong Hong Kong SAR 999077 P. R. China

Department of Physics and JILA University of Colorado Boulder CO 80309 USA

School of Physics and Electronic Science East China Normal University Shanghai 200241 P. R. China

References

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