Oxygen Vacancy‐Tailored Schottky Heterojunction Activates Interface Dipole Amplification and Carrier Inversion for High‐Performance Potassium‐Ion Batteries (Small 52/2023)
Source abstract
Abstract
Potassium-Ion Batteries Oxygen vacancies near the Bi2Sn2O7 surface amplify the Schottky effect, emphasizing the role of defect and junction engineering in enhancing electrochemical kinetics and diffusion for potassium-ion batteries, while boosting ordered bipolar carrier transport. More details can be found in article number 2305342 by Yi-Yen Hsieh and Hsing-Yu Tuan.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Electronic and Structural Properties of Oxides · Advancements in Solid Oxide Fuel Cells · Non-Destructive Testing Techniques
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Affiliations
Department of Chemical Engineering National Tsing Hua University Hsinchu 30013 Taiwan
References
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