Ultra‐High Interfacial Thermal Conductance via Double hBN Encapsulation for Efficient Thermal Management of 2D Electronics (Small 12/2023)
Source abstract
Abstract
Ultra-High Interfacial Thermal Conductance In article number 2205726, Baoxing Xu, Philip X.-L. Feng, Xian Zhang, and co-workers report on the ultra-high interfacial thermal conductance in encapsulated van der Waals (vdW) heterostructures with single-layer transition metal dichalcogenides MX2 (MoS2, WSe2, WS2) sandwiched between two hexagonal boron nitride (hBN) layers, through Raman spectroscopic measurements. The findings in this study reveal new thermal transport mechanisms in hBN/MX2/hBN structures and shed light on building novel flexible electronic devices.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Advanced Thermoelectric Materials and Devices · 2D Materials and Applications
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Affiliations
Department of Electrical, Computer, & Systems Engineering Case Western Reserve University Cleveland OH 44106 USA
Department of Mechanical and Aerospace Engineering University of Virginia Charlottesville VA 22904 USA
Department of Electrical and Computer Engineering University of Florida Gainesville FL 32611 USA
Department of Mechanical Engineering Stevens Institute of Technology Hoboken NJ 07030 USA
References
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