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journal article·2022-02Open access

In Situ Atomic‐Scale Observation of Monolayer MoS2 Devices under High‐Voltage Biasing via Transmission Electron Microscopy (Small 7/2022)

Yi‐Tang Tseng, Li‐Syuan Lu, Fang‐Chun Shen, Che‐Hung Wang, Hsin‐Ya Sung, Wen‐Hao Chang, Wen‐Wei Wu

Small· Volume 18· Issue 7
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Source abstract

Abstract

MoS2 Devices In article number 2106411, Wen-Wei Wu and co-workers reveal the direct observation of an MoS2 device under biasing via powerful in situ transmission electron microscopy (TEM). During in situ TEM biasing, the MoS2 is etched vertically and horizontally; the former is dominated by knock-on damage, while the latter involves atomic migration induced by Joule heating. Also, the long cracks that form by thermal stress, which are discovered in both in situ and ex situ biasing at 10 V, are discussed in this research. It is believed that insights of material damage can push the limit of material properties and broaden the range of MoS2-based device applications.
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Research context

OpenAlex topics: Semiconductor materials and interfaces · Chalcogenide Semiconductor Thin Films · 2D Materials and Applications

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Affiliations

Department of Materials Science and Engineering National Yang Ming Chiao Tung University No. 1001, University Rd., East Dist. Hsinchu City 30010 Taiwan

Department of Electrophysics National Yang Ming Chiao Tung University No. 1001, University Rd., East Dist. Hsinchu City 30010 Taiwan

Research Center for Applied Sciences Academia Sinica No. 128, Sec. 2, Academia Rd., Nangang Dist. Taipei City 11529 Taiwan

Center for the Intelligent Semiconductor Nano‐system Technology Research National Yang Ming Chiao Tung University No. 1001, University Rd., East Dist. Hsinchu City 30010 Taiwan

References

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