journal article·2020-12

Topological Hall Effect: Emergent Topological Hall Effect at a Charge‐Transfer Interface (Small 50/2020)

Zhi Shiuh Lim, Changjian Li, Zhen Huang, Xiao Chi, Jun Zhou, Shengwei Zeng, Ganesh Ji Omar, Yuan Ping Feng, Andrivo Rusydi, Stephen John Pennycook, Thirumalai Venkatesan, Ariando Ariando

Small· Volume 16· Issue 50
Publisher page

Abstract

In aticle number 2004683, Ariando Ariando and co-workers report that topological Hall effect is found in a CaMnO3/CaIrO3/CaMnO3//LaAlO3(001) heterostructure, which indicates the presence of magnetic Skyrmions entailing the charge-transfer induced magnetic superexchange. Thickness variations and atomic structure analyses suggest that the Dzyaloshinskii–Moriya interaction originates from the top CaMnO3/CaIrO3 interface, but is suppressed at the bottom CaIrO3/CaMnO3 interface due to the presence of stacking faults.
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Research context

OpenAlex topics: Magnetic and transport properties of perovskites and related materials · Magnetic Field Sensors Techniques · Electronic and Structural Properties of Oxides

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Affiliations

NUSNNI‐NanoCore National University of Singapore Singapore 117411 Singapore

Department of Physics National University of Singapore Singapore 117542 Singapore

Department of Materials Science and Engineering National University of Singapore Singapore 117575 Singapore

Singapore Synchrotron Light Source (SSLS) National University of Singapore 5 Research Link Singapore 117603 Singapore

References

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