journal article·2018-12

Microlight‐Emitting Diodes: Nitride‐Based Microlight‐Emitting Diodes Using AlN Thin‐Film Electrodes with Nanoscale Indium/Tin Conducting Filaments (Small 49/2018)

Kyung Rock Son, Tae Ho Lee, Byeong Ryong Lee, Hyun Sik Im, Tae Geun Kim

Small· Volume 14· Issue 49
Publisher page

Abstract

In article number 1801032, Tae Geun Kim and co-workers use AlN thin film electrodes with nanoscale indium/tin conducting filaments produced by the application of electric fields for nitride-based microlight-emitting diodes (μLEDs). These μLEDs exhibit much improved performance in terms of light emission as well as injection current density, owing to the ultra-high transmittance and efficient hole-injection rates into the light-emitting layers, compared to standard μLEDs with indium tin oxide electrodes.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: GaN-based semiconductor devices and materials

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Affiliations

School of Electrical Engineering Korea University Seongbuk‐gu Seoul 02841 Korea

Physics and Semiconductor Science Dongguk University Jung‐gu Seoul 04620 Korea

References

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