Microlight‐Emitting Diodes: Nitride‐Based Microlight‐Emitting Diodes Using AlN Thin‐Film Electrodes with Nanoscale Indium/Tin Conducting Filaments (Small 49/2018)
Source abstract
Abstract
In article number 1801032, Tae Geun Kim and co-workers use AlN thin film electrodes with nanoscale indium/tin conducting filaments produced by the application of electric fields for nitride-based microlight-emitting diodes (μLEDs). These μLEDs exhibit much improved performance in terms of light emission as well as injection current density, owing to the ultra-high transmittance and efficient hole-injection rates into the light-emitting layers, compared to standard μLEDs with indium tin oxide electrodes.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: GaN-based semiconductor devices and materials
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Affiliations
School of Electrical Engineering Korea University Seongbuk‐gu Seoul 02841 Korea
Physics and Semiconductor Science Dongguk University Jung‐gu Seoul 04620 Korea
References
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