Photodetectors: High-Responsivity Graphene/InAs Nanowire Heterojunction Near-Infrared Photodetectors with Distinct Photocurrent On/Off Ratios (Small 8/2015)
Source abstract
Abstract
On page 936, W. Hu, L. Liao, and co-workers develop a new type of graphene/InAs nanowire (NW) vertically stacked heterojunction infrared photodetector. This device exhibits a high photoresponsivity and a high photocurrent on/off ratio. The Fermi level of graphene can be widely tuned by the gate voltage due to its 2D nature. As a result, the back-gated bias can modulate the Schottky barrier at the interface between the graphene and InAs NWs, thus further controlling photocarrier transport across the vertically stacked heterostructures.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Advanced Semiconductor Detectors and Materials · Nanowire Synthesis and Applications · Semiconductor materials and interfaces
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