Photodetectors: Fabrication of Ultrathin Bi2S3 Nanosheets for High‐Performance, Flexible, Visible–NIR Photodetectors (Small 24/2015)
Source abstract
Abstract
Simple drop-deposition of ultrathin Bi2S3 nanosheets allows the low-cost construction of excellent flexible photodetectors. On page 2848, Q. Yang and co-workers report a simple organometallic route to ultrathin Bi2S3 nanosheets with thicknesses down to 2.2 nm. The nanosheets can be applied for the fabrication of photoconductors that show high sensitivity to visible–NIR light from 405 to 780 nm with a high external photoresponsivity up to 4.4 A W−1, a high detectivity of 1011 Jones, a response time as fast as 10 μs, and high flexibility and durability.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Chalcogenide Semiconductor Thin Films
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Affiliations
Hefei National Laboratory for Physical Sciences at Microscale Department of Chemistry Laboratory of Nanomaterials for Energy Conversion Synergetic Innovation Center of Quantum Information & Quantum Physics University of Science and Technology of China (USTC) Hefei Anhui 230026 P.R. China
School of Materials Science and Engineering Hefei University of Technology Hefei Anhui 230009 P.R. China
References
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