journal article·2008-01-18Open access

Mg2+‐Doped GaN Nanoparticles as Blue‐Light Emitters: A Method to Avoid Sintering at High Temperatures

Venkataramanan Mahalingam, Vasanthakumaran Sudarsan, Prabhakaran Munusamy, Frank C. J. M. van Veggel, Rui Wang, Andrew J. Steckl, Mati Raudsepp

Small· Volume 4· Issue 1

Abstract

Abstract Bright blue‐light emission at 410 nm is observed from Mg2+‐doped GaN nanoparticles prepared by the nitridation of Ga2MgO4 nanoparticles at 950°C. The sintering of these nanoparticles during high‐temperature nitridation was prevented by mixing the Ga2MgO4 precursor nanoparticles with La2O3 as an inert matrix before the nitridation process. The Mg2+‐doped GaN nanoparticles were isolated from the matrix by etching with 10 % nitric acid. The Mg2+‐doped GaN nanoparticles were characterized by photoluminescence, atomic force microscopy, X‐ray diffraction, and IR analyses.
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Research context

OpenAlex topics: GaN-based semiconductor devices and materials · Ga2O3 and related materials · ZnO doping and properties

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