Vertically Aligned Carbon‐Nanotube Arrays Showing Schottky Behavior at Room Temperature

Abstract Vertically aligned carbon‐nanotube (CNT) arrays were fabricated in the thin‐film anodic aluminum oxide (AAO) templates on silicon wafers utilizing a niobium (Nb) thin film as the source electrode. The average diameter of the CNTs was 25 nm, and the number density was 3×10¹⁰ cm⁻². The CNT arrays synthesized at 700 °C and above exhibited Schottky behavior even at 300 K, with energy gaps between 0.2 eV and 0.3 eV. However, individual CNTs obtained by removal of the template behaved as resistors at 300 K. The CNT/Nb oxide/Nb junction is thought to be responsible for the Schottky behavior. This structure can be a useful cornerstone in the fabrication of nanotransistors operating at room temperature.