In Situ Defect Engineering in Carbon by Atomic Self‐Activation to Boost the Accessible Low‐Voltage Insertion for Advanced Potassium‐Ion Full‐Cells (Small 27/2024)
Source abstract
Abstract
Potassium-Ion Full-Cells In article number 2302037, Yaxin Chen and co-workers present an in-situ defect engineering strategy in carbon to boost the accessible low-voltage insertion for advanced potassium-ion full-cells. The defects in the carbon layers provide channels for accessible and fast potassium ions diffusion to enhance the potassium storage performance. This work provides some ideas for carbon anode materials of full-cells.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Semiconductor materials and devices · Integrated Circuits and Semiconductor Failure Analysis
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Affiliations
School of Materials Science and Physics China University of Mining and Technology Xuzhou 221116 China
Advanced Analysis & Computation Center China University of Mining and Technology Xuzhou 221116 China
School of Chemical Engineering and Technology China University of Mining and Technology Xuzhou 221116 China
References
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