2D Memory Selectors with Giant Nonlinearity Enabled by Van der Waals Heterostructures (Small 25/2024)
Source abstract
Abstract
2D Selectors In article number 2310158, Yanpeng Liu, Wanlin Guo, and co-workers devise a 2D graphene/hBN/WSe2 selector that exhibits outstanding bipolar nonlinearity at room-temperature. Profiting from well-designed band alignment and proper tunneling barrier, the selector undergoes direct tunneling at low bias, and Fowler-Nordheim tunneling at high bias. This proof-of-concept demonstration opens up a new paradigm for promoting 2D 1S1R arrays toward memory applications.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: 2D Materials and Applications · Advanced Memory and Neural Computing · Ferroelectric and Negative Capacitance Devices
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Affiliations
Key Laboratory for Intelligent Nano Materials and Devices of Ministry of Education State Key Laboratory of Mechanics and Control of Mechanical Structures and Institute for Frontier Science Nanjing University of Aeronautics and Astronautics Nanjing 210016 China
School of Physics Southeast University Nanjing 211189 China
References
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