Nanoscale Channel Gate‐Tunable Diodes Obtained by Asymmetric Contact and Adhesion Lithography on Fluoropolymers (Small 35/2023)
Source abstract
Abstract
Adhesion Lithography Hocheon Yoo and co-workers employ adhesion lithography to fabricate coplanar asymmetric nanogap electrodes, utilizing adhesives like tape or glue. By optimizing the process, they achieve a high yield and successfully demonstrate a gate-tunable Schottky diode using these electrodes. The rectification ratio of the gate-tunable Schottky diode can be adjusted by varying the gate voltage. More details can be found in article number 2208144.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Molecular Junctions and Nanostructures · Nanofabrication and Lithography Techniques · Advanced Sensor and Energy Harvesting Materials
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Affiliations
Department of Electronic Engineering Gachon University 1342 Seongnam‐daero Seongnam 13120 South Korea
References
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