Reversible Diode with Tunable Band Alignment for Photoelectricity‐Induced Artificial Synapse (Small 34/2023)
Source abstract
Abstract
Photoelectricity-Induced Artificial Synapses A miniaturized diode with reversible switching state based on N-n MoS2 homojunction uses a bandgap renormalization effect through the band alignment type regulated by both dielectric and polarization, controllably switched between type-I and type-II, which can be simulated as artificial synapse for sensing memory processing because of its rectification, nonvolatile characteristic and high optical responsiveness. More details can be found in article number 2300468 by Jing Ning, Xinran Wang, Jincheng Zhang, and co-workers.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Advanced Nanomaterials in Catalysis
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Affiliations
The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology Xidian University Xi'an 710071 P. R. China
Shaanxi Joint Key Laboratory of Graphene Xidian University Xi'an 710071 P. R. China
Xidian‐Wuhu Research Institute Wuhu 241000 P. R. China
National Laboratory of Solid‐State Microstructures School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures Nanjing University Nanjing 210093 P. R. China
References
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