High Power Figure‐of‐Merit, 10.6‐kV AlGaN/GaN Lateral Schottky Barrier Diode with Single Channel and Sub‐100‐µm Anode‐to‐Cathode Spacing (Small 37/2022)
Source abstract
Abstract
Schottky Barrier Diodes GaN is a promising candidate for next-generation power electronic devices, but its potential is far from being realized. In article number 2107301, Peng Chen, Rong Zhang, Youdou Zheng, and co-workers demonstrate a high power figure-of-merit, 10.6-kV AlGaN/GaN lateral Schottky barrier diode with single channel, and sub-100-μm anode-to-cathode spacing without any other additional structures, which gives a clear and positive answer that GaN can be used in ultra-high voltage applications.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: GaN-based semiconductor devices and materials
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Affiliations
The Key Laboratory of Advanced Photonic and Electronic Materials School of Electronic Science and Engineering Nanjing University Nanjing 210033 P. R. China
Corenergy Semiconductor Incorporation Suzhou 215600 P. R. China
Enkris Semiconductor Inc NW‐20, Nanopolis Suzhou 215000 P. R. China
References
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