Light‐Emitting Diodes: Solution Processed Tungsten Oxide Interfacial Layer for Efficient Hole‐Injection in Quantum Dot Light‐Emitting Diodes (Small 2/2014)
Abstract
Research context
OpenAlex topics: Quantum Dots Synthesis And Properties · Gas Sensing Nanomaterials and Sensors · ZnO doping and properties
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Affiliations
Luminous! Center of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering Nanyang Technological University Nanyang Avenue Singapore 639798 Singapore
Department of Electrical and Electronics Engineering, Department of Physics, UNAM – Institute of Materials Science and Nanotechnology Bilkent University Bilkent, Ankara 06800 Turkey
School of Physical and Mathematical Sciences Nanyang Technological University Nanyang Avenue Singapore 639798 Singapore
State Key Lab of Luminescence Materials and Devices, Institute of Optical Communication Materials South China University of Technology Guangdong 510641 China
Institute of Materials Research and Engineering A* STAR (Agency for Science, Technology and Research) 3 Research Link Singapore 117602 Singapore
South University of Science and Technology 1088 Xue‐Yuan Road Shenzhen Guangdong 518055 China
References
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