Lateral Manipulation of Single‐Walled Carbon Nanotubes on H‐Passivated Si(100) Surfaces with an Ultrahigh‐Vacuum Scanning Tunneling Microscope

Abstract Ultrahigh‐vacuum (UHV) scanning tunneling microscopy (STM) can be used for the manipulation of individual atoms and molecules into complex arrangements for sensitive electrical and structural characterization. However, the systematic UHV STM manipulation of single‐walled carbon nanotubes (SWNTs), high‐aspect‐ratio molecular wires derived from graphene that exist in both semiconducting and metallic forms, has yet to be reported. In this work, we demonstrate the room‐temperature lateral manipulation of ≈1‐nm‐diameter SWNTs on UHV‐prepared, hydrogen‐passivated Si(100) surfaces. We show the reproducible actuation of SWNTs having lengths as small as 13 nm, along with the partial division of a two‐tube bundle. Moreover, UHV STM desorption of H at the SWNT/Si interface is introduced as a means of locally strengthening the interaction between the tube and the surface. The UHV STM manipulation scheme described here is potentially extensible to the orientational control of SWNTs interfaced with atomically clean semiconducting surfaces, such as InAs(110), GaAs(110), and unpassivated Si(100), for which first‐principles calculations based on density functional theory have been reported recently in the literature.