Building S‐Scheme p ‐ n Junction by the In Situ Sulfidation of Cu‐TCPP Toward Boosted Photocatalytic Activity for CO ₂ Photoreduction and Sterilization

Abstract In this work, an S‐type p ‐ n junction is designed and fabricated by in situ interfacial sulfidation of Cu‐TCPP. Due to the combination of in situ derived CuS, the light absorption expanded to the full‐solar‐light spectrum, with expected thermal effect and exponentially increased electrical conductivity. The co‐shared Cu atoms inspired intimate atomic‐level contact and strong electron cooperation to formulate the high‐speed electron/heat transfer channel. The formed O─Cu─S bonds up‐shifted the Fermi level at the interface of Cu‐TCPP and induced an extra driven force for electron extraction, suppressing the recombination of photogenerated carriers. The CO product yield over CuS‐3 can reach 693.51 µmol g ⁻ ¹ h ⁻ ¹ with the increased selectivity of 99.23%. Considering the enhanced photothermal conversion and oxidation capacity, it could also eradicate 99.99% of S. aureus under simulated solar light. The outperformed self‐healing and bio‐compatible property is undercovered in the wound treatment. This high‐efficiency photocharges, coupled with the “greenhouse” effect at high‐quality interface, has stimulated the exploitation of other similar material assemblies.