DataVXSmallPaper
journal article·2018-02Open access

Photonics: Enhanced Performance of MoS2 Photodetectors by Inserting an ALD‐Processed TiO2 Interlayer (Small 5/2018)

Yusin Pak, Woojin Park, Somak Mitra, Assa Aravindh Sasikala Devi, Kalaivanan Loganathan, Yogeenth Kumaresan, Yonghun Kim, Byungjin Cho, Gun‐Young Jung, Muhammad M. Hussain, Iman S. Roqan

Small· Volume 14· Issue 5
Publisher pageOpen full text
Source abstract

Abstract

In article number 1703176, Iman S. Roqan and co-workers report the use of an atomic layer-deposited TiO2 interlayer between exfoliated MoS2 and electrode to enhance the performance of MoS2 photodetectors. The TiO2 interlayer is inserted through 20 cycled-atomic layer depositions, leading to significant enhancements in the photo-responsivity and response-recovery time.
Source: openalex_inverted_index · Quality: baseline

Research context

Materials processing

OpenAlex topics: Chalcogenide Semiconductor Thin Films

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Affiliations

Physical Science and Engineering Division King Abdullah University of Science and Technology (KAUST) Thuwal 23955‐6900 Saudi Arabia

Computer Electrical Mathematical Science and Engineering King Abdullah University of Science and Technology (KAUST) Thuwal 23955‐6900 Saudi Arabia

School of Materials Science and Engineering Gwangju Institute of Science and Technology (GIST) 261 Cheomdan‐gwagiro Buk‐gu Gwangju 500‐712 Republic of Korea

Department of Advanced Functional Thin Films Surface Technology Division Korea Institute of Materials Science (KIMS) 797 Changwondaero Sungsan‐gu, Changwon Gyeongnam 51508 Republic of Korea

Department of Advanced Material Engineering Chungbuk National University 1 Chungdae‐ro Seowon‐gu, Cheongju Chungbuk 28644 Republic of Korea

References

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