journal article·2014-11Open access

Nanosheets: Solvothermal Synthesis of Ternary Cu2MoS4 Nanosheets: Structural Characterization at the Atomic Level (Small 22/2014)

Wenxing Chen, Haiping Chen, Hangtian Zhu, Qingqing Gao, Jun Luo, Yu Wang, Shuo Zhang, Ke Zhang, Chengming Wang, Yujie Xiong, Yanfei Wu, Xusheng Zheng, Wangsheng Chu, Li Song, Ziyu Wu

Small· Volume 10· Issue 22

Abstract

Layered Cu2MoS4 nanosheets are prepared by L. Song, Z. Y. Wu, and co-workers via a solvothermal method, in which Cu2O is used as a sacrificial template. On page 4637, the microstructure of Cu2MoS4 nanosheets is identified at the atomic level. The growth mechanism is monitored on the nanoscale by systematic time-dependent experiments. It is found that the Kirkendall effect, Ostwald ripening, and oriented attachment play important roles in the growth process of ternary Cu2MoS4 atomic layers.
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Research context

OpenAlex topics: Chalcogenide Semiconductor Thin Films · Quantum Dots Synthesis And Properties · Copper-based nanomaterials and applications

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Affiliations

National Synchrotron Radiation Laboratory University of Science and Technology of China Hefei 230029 P. R. China

Institute of Physics Chinese Academy of Sciences Beijing 100190 P. R. China

Shanghai Synchrotron Radiation Facilities Shanghai Institute of Applied Physics Chinese Academy of Science Shanghai 201204 P. R. China

Hefei National Laboratory for Physical Science at the Microscale School of Chemistry and Materials Science, University of Science and Technology of China Hefei, Anhui 230026 P. R. China

References

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