Epitaxial Growth of Asymmetrically‐Doped Bilayer Graphene for Photocurrent Generation
Source abstract
Abstract
An asymmetrically doped bilayer graphene is grown by modulation-doped chemical vapor deposition, which consists of one intrinsic layer and one nitrogen-doped layer according to AB stacking. The asymmetrically doped bilayer crystalline profile is found to extend the identical registry as adjacent pristine bilayer region, thus forming single-crystalline bilayer graphene p-n junctions. Efficient photocurrent with responsivity as high as 0.2 mA/W is generated at the bilayer p-n junctions via a hot carrier-assisted mechanism.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Graphene research and applications · 2D Materials and Applications · Graphene and Nanomaterials Applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Center for Nanochemistry Beijing National Laboratory for Molecular Sciences (BNLMS) State Key Laboratory for Structural Chemistry of Unstable and Stable Species College of Chemistry and Molecular Engineering Academy for Advanced Interdisciplinary Studies Peking University Beijing 100871 People's Republic of China
State Key Laboratory of Catalysis Dalian Institute of Chemical Physics Chinese Academy of Sciences Dalian 116023 China
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