Ni3Se4/ZnSe Heterostructured Nanowires Grown by Molecular Beam Epitaxy
Source abstract
Abstract
Ni3Se4/ZnSe heterostructured nanowires with a sharp interface are fabricated using nanocatalysts generated on an annealed Au/Ni/ZnSe trilayer. The top Ni3Se4 section acts as an efficient catalyst to assist ultrafast growth of the bottom ZnSe section. A greater understanding of how the effective area and size of the catalyst affect the growth rate and preferred axial orientation of ultrathin nanowires is obtained. Detailed facts of importance to specialist readers are published as ”Supporting Information”. Such documents are peer-reviewed, but not copy-edited or typeset. They are made available as submitted by the authors. Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Nanowire Synthesis and Applications · Quantum Dots Synthesis And Properties · Chalcogenide Semiconductor Thin Films
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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