Enhanced Secondary Electron Emission from Group III Nitride/ZnO Coaxial Nanorod Heterostructures
Source abstract
Abstract
Needle work: AlN/ZnO and GaN/ZnO coaxial nanoneedle heterostructures (see TEM image) have a higher secondary electron emission (SEE) yield (σ) than thin films of AlN and GaN deposited on Si substrates. The dependence of the SEE on the incidence angle of the beam indicates that these heterostructures do not follow the power law. The σ value of the heterostructures is enhanced by the inherited nanostructure from the ZnO nanoneedle template.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: ZnO doping and properties · GaN-based semiconductor devices and materials · Ga2O3 and related materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (13)
Show source-provided references
1. 10.1063/1.161164510.1063/1.1611645 ↗
2. 10.1063/1.136886710.1063/1.1368867 ↗
3. 10.1063/1.149849210.1063/1.1498492 ↗
4. 10.1016/S0169-4332(00)00200-210.1016/S0169-4332(00)00200-2 ↗
5. 10.1016/0039-6028(79)90341-810.1016/0039-6028(79)90341-8 ↗
6. 10.1016/S0009-2614(03)01168-010.1016/S0009-2614(03)01168-0 ↗
7. 10.1063/1.11601810.1063/1.116018 ↗
8. 10.1063/1.173818010.1063/1.1738180 ↗
9. 10.1002/adma.20029001510.1002/adma.200290015 ↗
10. 10.1063/1.32608910.1063/1.326089 ↗
11. 10.1063/1.36870010.1063/1.368700 ↗
12. 10.1103/PhysRevB.45.1273610.1103/PhysRevB.45.12736 ↗
13. 10.1063/1.32879110.1063/1.328791 ↗