Unveiling the Roles of Fluoroalkylated‐Dopamine Functionalization in Dispersion Stability of MXene Organic Inks and Electrochemical Performance of Inkjet‐Printed Micro‐Supercapacitors
Source abstract
Abstract
ABSTRACT Ti 3 C 2 T x (MXene) has emerged as a promising material for printed energy electronics, owing to its high conductivity and intrinsic hydrophilicity. However, achieving both long‐term stability and high electrochemical activity in MXene inks remains challenging. Here, we introduce a surface functionalization strategy using alkylated 3,4‐dihydroxy‐L‐phenylalanine (ADOPA, AD) to prepare high‐quality AD‐MXene organic inks suitable for inkjet printing. First‐principles and molecular dynamics simulations reveal that ADOPA molecules strongly anchor onto MXene surfaces through hydrogen bonding, while the incorporated fluoroalkyl chains expand interlayer spacing, enhance solvent compatibility, and passivate defect sites, thereby substantially promoting dispersion stability of inks. Micro‐supercapacitors (MSCs) printed from AD‐MXene inks exhibit outstanding performance, delivering an areal capacitance of 45.46 mF cm − 2 , a volumetric capacitance of 857.33 F cm − 3 , and an energy density of 11.10 mWh cm − 3 at a power density of 359.44 mW cm − 3 , along with 95.48% capacitance retention after 10 000 cycles and excellent mechanical flexibility. Kinetic analysis further indicates that AD‐MXene electrodes exhibit higher capacitive contributions than pristine MXene counterparts, reflecting superior ion transport, adsorption, and surface charge storage. This work demonstrates the effectiveness of molecular functionalization in enabling stable MXene inks and scalable, high‐performance energy storage devices.
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Research context
OpenAlex topics: MXene and MAX Phase Materials · Supercapacitor Materials and Fabrication · Graphene research and applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
School of Advanced Materials and Nanotechnology Xidian University Xi'an Shaanxi P. R. China
Key Lab of Wide Band‐Gap Semiconductor Materials and Devices Xidian University Xi'an Shaanxi P. R. China
Shaanxi Key Laboratory of High‐Orbits‐Electron Materials and Protection Technology for Aerospace Xi'an Shaanxi P. R. China
Funding
National Natural Science Foundation of China
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