Oxidation Dynamics and Surface Chemistry of Iridium and Iridium Oxide Films Grown by Atomic Layer Deposition Using O ₂ and O ₃

Abstract Atomic layer deposition of Ir and IrO ₂ is demonstrated using O ₂ and O ₃ with various exposure conditions as reactants. The nucleation density of Ir increases with the oxidation potential of the reactants, leading to the formation of continuous and conductive films at lower thicknesses. A higher oxidation potential improves the continuity and crystallinity of the Ir films, resulting in a decrease in their resistivity. O ₂ ‐based processes result in Ir metal films regardless of O ₂ exposure time due to low oxidation potential. Conversely, in O ₃ ‐based processes, deposited Ir is oxidized into IrO ₂ with prolonged exposure time due to higher oxidation potential of O ₃ . The resistivity of IrO ₂ films decrease with increasing oxidation potential due to higher purity, resulting from facilitated oxidation. Additionally, the formation of surface OH groups is observed and increased with O ₃ exposure time or pressure, causing a decrease in precursor adsorption efficiency and thus suppression of the film deposition. A model explaining growth behavior of Ir and IrO ₂ films, regarding oxidation potential and exposure time of reactant, is proposed.