journal article·2025-11

Ultralarge Spin Hall Angle via TiO 2 Nanocluster‐Mediated Side‐Jump Scattering

Xinkai Xu, Yuanjing Qu, Yixin Wang, Qinghui Yang, Dainan Zhang, Huaiwu Zhang

Small· Volume 21· Issue 45
Publisher page

Abstract

Abstract Spin‐orbit torque (SOT) enables efficient magnetization switching via the spin Hall effect in heavy metals, yet existing materials face tradeoffs between spin Hall angle, conductivity, and process compatibility. Here, W 1− x (TiO 2 ) x nanocomposites are reported by incorporating TiO 2 nanoclusters into the β‐phase W, achieving a maximum spin Hall angle of −1.66 and damping‐like SOT efficiency of −0.94, representing 114% enhancement over pure W. By theoretically separating the contributions of the intrinsic and extrinsic mechanisms of the spin Hall effect, the enhancement of spin−orbit torque efficiency originates from substantial side jump induced by TiO 2 nanoclusters. Current‐induced magnetization switching of W 0.88 (TiO 2 ) 0.12 demonstrates ultralow critical density (1.78 × 10 6 A cm −2 ). Combined with its cost‐effectiveness and low power consumption, these results position W 0.88 (TiO 2 ) 0.12 as a promising candidate to replace conventional β‐W in industrial SOT‐magnetic random‐access memory applications.
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Research context

OpenAlex topics: Magnetic properties of thin films · Magnetic and transport properties of perovskites and related materials · Multiferroics and related materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

School of Electronic Science and Engineering University of Electronic Science and Technology of China Chengdu 610054 P. R. China

State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China Chengdu 610054 P. R. China

Funding

National Natural Science Foundation of China · National Key Research and Development Program of China

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