journal article·2022-08

Extraction‐Dominated Temperature Degradation of Population Inversion in Terahertz Quantum Cascade Lasers

Yuyang Wu, Jinchuan Zhang, Yunhao Zhao, Chongyun Liang, Fengqi Liu, Yi Shi, Renchao Che

Small· Volume 18· Issue 34
Publisher page

Abstract

Abstract Degraded population inversion (PI) at elevated temperature, regarded as an important temperature degradation factor in terahertz quantum cascade lasers (THz QCL), has hindered the widespread use of these devices. Herein, the mechanism of the temperature degradation of PI is investigated microscopically. It is demonstrated that the limited extraction efficiency of the extraction system dominates the decrease of PI at elevated temperatures. To be specific, the increased temperature brings about intense thermally activated longitudinal optical phonon scattering, leading to large amounts of electrons scattering to lower level state. In this case, the resonant‐phonon extraction system is incapable of depleting all the electrons from lower level states. So even though the resonant‐tunneling injection seems efficient enough to compensate the electron runoff at the upper state, the electron density at lower level state increases and the overall PI turns out lower. In addition, it is found that strong electron‐ionized donor separation at high temperature can induce level misalignment, which can stagger the optimal conditions of injection and extraction. Also, the extraction efficiency gets lower as the extraction system requires accurate coupling between several energy levels.
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Research context

OpenAlex topics: Spectroscopy and Laser Applications · Atomic and Subatomic Physics Research · Atmospheric Ozone and Climate

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Laboratory of Advanced Materials Shanghai Key Lab of Molecular Catalysis and Innovative Materials Department of Materials Science Fudan University Shanghai 200438 P. R. China

Joint‐Research Center for Computational Materials Zhejiang Laboratory Hangzhou 311100 P. R. China

Key Laboratory of Semiconductor Materials Science Institute of Semiconductors Chinese Academy of Sciences Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices Beijing 100083 P. R. China

Department of Chemistry Fudan University Shanghai 200433 P. R. China

National Laboratory of Solid State Microstructures School of Electronic Science and Engineering and Collaborative Innovation Centre of Advanced Microstructures Nanjing University Nanjing 210093 P. R. China

Funding

National Natural Science Foundation of China

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