2D Materials: Lattice Structure and Bandgap Control of 2D GaN Grown on Graphene/Si Heterostructures (Small 14/2019)
Source abstract
Abstract
In article number 1802995, Guoqiang Li and co-workers demonstrate a 2D GaN with wellcontrolled lattice structure and bandgap on graphene/Si hetero-structure. The bandgap for 2D GaN in P63MC and R3m structure is determined to be ≈4.65 and ≈4.18 eV, respectively. The 2D GaN shows a great potential for the development of deep ultraviolet devices.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Ga2O3 and related materials · GaN-based semiconductor devices and materials
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Affiliations
State Key Laboratory of Luminescent Materials and Devices South China University of Technology Guangzhou 510640 China
Guangdong Choicore Optoelectronics Co., Ltd. Heyuan 517003 China
References
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