journal article·2023-03

A Solvent‐Free, Thermally Curable Low‐Temperature Organic Planarization Layer for Thin Film Encapsulation

Yong Cheon Park, Hye Rin Shim, Kihoon Jeong, Sung Gap Im

Small· Volume 19· Issue 10
Publisher page

Abstract

Abstract Thin film encapsulation (TFE) is an essential component to ensure reliable operation of environmentally susceptible organic light‐emitting diode‐based display. In order to integrate defect‐free TFE on display with complex surface structures, additional planarization layer is imperative to planarize the surface topography. The thickness of conventional planarization layer is as high as tens of µm, but the thickness must be reduced substantially to minimize the light leakage in smaller devices such as micro light‐emitting diodes. In this study, a thin—less than 2 µm—planarization is achieved via solvent‐free process, initiated chemical vapor deposition (iCVD). By adapting copolymer from two soft, but curable monomers, glycidyl acrylate (GA) and 2‐(dimethylamino)ethyl methacrylate, excellent planarization performance is achieved on various nano‐grating patterns. With only 1.5 µm‐thick iCVD planarization layer, a 600 nm‐deep trench polyurethane acrylate pattern is flattened completely. The TFE fabricated on planarized pattern exhibits excellent barrier property as fabricated on flat glass substrate, which strongly suggests that iCVD planarization layer can serve as a promising planarization layer to fabricate TFE on various types of complicated device surfaces.
Source: crossref · Quality: baseline

Research context

OpenAlex topics: Advanced Sensor and Energy Harvesting Materials · Organic Light-Emitting Diodes Research · Organic Electronics and Photovoltaics

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Chemical and Biomolecular Engineering Korea Advanced Institute of Science and Technology (KAIST) 291 Daehak‐ro, Yuseong‐gu Daejeon 34141 Republic of Korea

KAIST Institute for NanoCentury (KINC) Korea Advanced Institute of Science and Technology (KAIST) 291 Daehak‐ro, Yuseong‐gu Daejeon 34141 Republic of Korea

Funding

Ministry of SMEs and Startups · National Research Foundation of Korea · Samsung Advanced Institute of Technology

References (33)

Show source-provided references
1. 10.1021/acsnano.0c0664910.1021/acsnano.0c06649 ↗
2. 10.1021/acsami.9b0504810.1021/acsami.9b05048 ↗
3. 10.1002/adfm.20200933610.1002/adfm.202009336 ↗
4. 10.1002/jsid.88210.1002/jsid.882 ↗
5. 10.1002/smll.20210336510.1002/smll.202103365 ↗
6. 10.1109/JSTQE.2004.82411210.1109/JSTQE.2004.824112 ↗
7. 10.1088/2058-8585/ab6e7310.1088/2058-8585/ab6e73 ↗
8. 10.1002/1616-3028(200104)11:2<116::AID-ADFM116>3.0.CO;2-B10.1002/1616-3028(200104)11:2<116::AID-ADFM116>3.0.CO;2-B ↗
9. 10.1016/j.apsusc.2022.15387410.1016/j.apsusc.2022.153874 ↗
10. 10.1021/acsmaterialslett.1c0021310.1021/acsmaterialslett.1c00213 ↗
11. 10.1038/s41467-019-10412-910.1038/s41467-019-10412-9 ↗
12. 10.1002/adma.20160173710.1002/adma.201601737 ↗
13. 10.1126/science.114171110.1126/science.1141711 ↗
14. 10.1063/1.85766910.1063/1.857669 ↗
15. 10.1063/1.181480210.1063/1.1814802 ↗
16. 10.1088/1361-6439/ab3b1810.1088/1361-6439/ab3b18 ↗
17. 10.1149/1.210081310.1149/1.2100813 ↗
18. Buck P. D. · Photomask Technol. · 2017 · 10451
19. 10.1002/sdtp.1550510.1002/sdtp.15505 ↗
20. Kim H. · 2012
21. 10.3740/MRSK.2016.26.8.42710.3740/MRSK.2016.26.8.427 ↗
22. 10.1002/aenm.20170192810.1002/aenm.201701928 ↗
23. 10.1063/1.370242810.1063/1.3702428 ↗
24. 10.1016/j.tsf.2017.01.01210.1016/j.tsf.2017.01.012 ↗
25. 10.1021/acsenergylett.6b0045610.1021/acsenergylett.6b00456 ↗
26. 10.1039/B812121D10.1039/B812121D ↗
27. 10.1021/acs.macromol.7b0210210.1021/acs.macromol.7b02102 ↗
28. 10.1002/adhm.20150000310.1002/adhm.201500003 ↗
29. 10.1021/ie50553a02910.1021/ie50553a029 ↗
30. 10.1016/0032-3861(61)90010-610.1016/0032-3861(61)90010-6 ↗
31. 10.1021/ma950978u10.1021/ma950978u ↗
32. 10.1016/j.ijadhadh.2008.09.00810.1016/j.ijadhadh.2008.09.008 ↗
33. 10.1039/C7SM01472D10.1039/C7SM01472D ↗