Reversible Diode with Tunable Band Alignment for Photoelectricity‐Induced Artificial Synapse

Abstract The advent of big data era has put forward higher requirements for electronic nanodevices that have low energy consumption for their application in analog computing with memory and logic circuit to address attendant energy efficiency issues. Here, a miniaturized diode with a reversible switching state based on N‐n MoS₂ homojunction used a bandgap renormalization effect through the band alignment type regulated by both dielectric and polarization, controllably switched between type‐I and type‐II, which can be simulated as artificial synapse for sensing memory processing because of its rectification, nonvolatile characteristic and high optical responsiveness. The device demonstrates a rectification ratio of 10³. When served as memory retention time, it can attain at least 7000 s. For the synapse simulation, it has an ultralow‐level energy consumption because of the pA‐level operation current with 5 pJ for long‐term potentiation and 7.8 fJ for long‐term depression. Furthermore, the paired pulse facilitation index reaches up to 230%, and it realizes the function of optical storage that can be applied to simulate visual cells.