Graphene: High Detectivity Graphene‐Silicon Heterojunction Photodetector (Small 5/2016)
Source abstract
Abstract
Highly sensitive photodetectors based on a graphene-silicon heterojunction with interface improvements are demonstrated by X. M. Li, H. W. Zhu, Y. Fang, and co-workers on page 595. By introducing a thin, interfacial oxide layer for dark current suppression, the graphene-silicon photodetector exhibits the highest-reported detectivity for a planar graphene-silicon heterojunction photodetector. This basic concept of a graphene-silicon heterojunction with interface improvements could be applied to other two-dimensional materials.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Silicon Nanostructures and Photoluminescence
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
National Center for Nanoscience and Technology Zhongguancun Beijing 100190 P. R. China
State Key Laboratory of New Ceramics and Fine Processing School of Materials Science and Engineering Tsinghua University Beijing 100084 P. R. China
Department of Chemical Engineering Tsinghua University Beijing 100084 P. R. China
CAS Center for Excellence in Brain Science and Intelligence Technology 320 Yue Yang Road Shanghai 200031 P. R. China
References
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