Resolving In Situ Specific‐Contact, Current‐Crowding, and Channel Resistivity in Nanowire Devices: A Case Study with Silver Nanowires

Resistance contributions in a nanowire device are determined accurately. Resistance in silver nanowires, such as conduction-channel and contact resistance, including current-crowding effects, reveal both the true nanowire resistivity and the overall device performance, including dissipation and scaling potential. A comprehensive study on the device layout, the contact geometry and, most importantly, the transfer length over which charge injection between contact electrode and nanowire occurs, is performed. Detailed facts of importance to specialist readers are published as ”Supporting Information”. Such documents are peer-reviewed, but not copy-edited or typeset. They are made available as submitted by the authors. Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.