Highly Manufacturable Deep (Sub‐Millimeter) Etching Enabled High Aspect Ratio Complex Geometry Lego‐Like Silicon Electronics
Source abstract
Abstract
A highly manufacturable deep reactive ion etching based process involving a hybrid soft/hard mask process technology shows high aspect ratio complex geometry Lego-like silicon electronics formation enabling free-form (physically flexible, stretchable, and reconfigurable) electronic systems.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Advanced Sensor and Energy Harvesting Materials · Advanced Materials and Mechanics · Modular Robots and Swarm Intelligence
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Integrated Nanotechnology Lab and Integrated Disruptive Electronic Applications (IDEA) Lab King Abdullah University of Science and Technology Thuwal 23955‐6900 Saudi Arabia
Funding
King Abdullah University of Science and Technology
References (33)
Show source-provided references
1. 10.1016/0924-4247(94)85031-310.1016/0924-4247(94)85031-3 ↗
2. 10.1016/0167-9317(96)00007-X10.1016/0167-9317(96)00007-X ↗
3. 10.1016/j.mejo.2005.04.03910.1016/j.mejo.2005.04.039 ↗
4. 10.1088/0960-1317/5/2/01510.1088/0960-1317/5/2/015 ↗
5. 10.1016/S0924-4247(00)00482-910.1016/S0924-4247(00)00482-9 ↗
6. 10.1016/0924-4247(96)80117-810.1016/0924-4247(96)80117-8 ↗
7. 10.1088/0960-1317/5/1/00210.1088/0960-1317/5/1/002 ↗
8. 10.1002/pssr.20130820910.1002/pssr.201308209 ↗
9. 10.1002/adma.20150423610.1002/adma.201504236 ↗
10. 10.1063/1.489812810.1063/1.4898128 ↗
11. Ghoneim M. T. · IEEE Trans. Reliab. · 2014 · 64 · 2
12. 10.1063/1.493810110.1063/1.4938101 ↗
13. 10.1109/TED.2013.227818610.1109/TED.2013.2278186 ↗
14. 10.1021/nn501124h10.1021/nn501124h ↗
15. 10.1063/1.493435510.1063/1.4934355 ↗
16. 10.1063/1.488264710.1063/1.4882647 ↗
17. Ghoneim M. T. · 2015 · 95
18. 10.3390/electronics403042410.3390/electronics4030424 ↗
19. 10.1063/1.492791310.1063/1.4927913 ↗
20. 10.1002/aelm.20150004510.1002/aelm.201500045 ↗
21. 10.1016/j.mejo.2014.07.01110.1016/j.mejo.2014.07.011 ↗
22. F.Laermer A.Schilp (Robert Bosch Gmbh) US5501893 A 1996.
23. S.Soggs R.Powell EE539A: Physics and Modeling of VLSI Fabrication dunham.ee.washington.edu/ee539/EE539_Bosch_DRIE_3.doc (accessed: August2016).
24. 10.1063/1.10193710.1063/1.101937 ↗
25. 10.1116/1.58235910.1116/1.582359 ↗
26. In‐Hyouk S. · J. Micromech. Microeng. · 2007 · 17 · 8
27. Hiroaki K. · Jpn. J. Appl. Phys. · 2006 · 45 · 6S
28. 10.1116/1.280461210.1116/1.2804612 ↗
29. 10.1541/ieejsmas.127.18710.1541/ieejsmas.127.187 ↗
30. 10.1109/JMEMS.1996.54641110.1109/JMEMS.1996.546411 ↗
31. 10.1116/1.58175910.1116/1.581759 ↗
32. 10.1016/S0924-4247(01)00611-210.1016/S0924-4247(01)00611-2 ↗
33. 10.1116/1.370023010.1116/1.3700230 ↗