Ultrathin Fullerene Films as High‐Resolution Molecular Resists for Low‐Voltage Electron‐Beam Lithography
Source abstract
Abstract
Hard to resist: Films of methanofullerenes (see scheme) can be used as resists for lithography at low electron-beam energies (0.2 to 5 keV). Improvements in the sensitivity and maintained etch durability are seen as the electron energies are reduced from 20 to 1 keV. High-resolution patterning is also demonstrated at low energies. The small molecular size of the fullerene derivatives alleviates problems associated with line-edge roughness.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Fullerene Chemistry and Applications · Graphene research and applications · Electron and X-Ray Spectroscopy Techniques
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