journal article·2024-12

Enhance the Performance of CZTSSe Solar Cells Through Inhibiting the Cu2+, Tu, and (─COOH) Association Reaction

Lei Wang, Letu SiQin, Yiming Wang, Shuyu Li, Wenjing Xin, Jingyuan Guo, Ruijian Liu, Hongmei Luan, Chengjun Zhu

Small· Volume 20· Issue 50
Publisher page

Abstract

Abstract The Sol‐gel precursor solution reaction mechanism has a significant impact on the Cu2ZnSn(S, Se)4 (CZTSSe) solar cells. It is discovered that in the Cu2ZnSnS4 (CZTS) precursor solution (CZTS‐PS) in the preparation, there is an association reaction among Cu2+, thiourea (Tu), and carboxyl (‐COOH), which is an important reason for the undesirable CZTSSe solar cells. The strong association reaction generates excessive Cu2+ ions, forming the CuxSe secondary phase on the surface of the CZTSSe absorber. The secondary phase causes a short circuit and deterioration of gadget performance. Following a 6‐h aging period for the CZTS‐PS, the average photoelectric conversion efficiency (PCE) of the device is enhanced to 8.02%, and there is also an improvement in device uniformity, as evidenced by a decrease in the standard deviation to less than 1. To inhibit the association reaction and eliminate the aging time phenomenon, a strategy is developed using hydrochloric acid to regulate the CZTS‐PS environment. This strategy shifts the REDOX reaction in Cu2++Sn2+ toward the formation of Cu1++Sn4+, leading to a decrease in the defect concentrations of VSn(−/0) and CuSn(−/0), which increases the carrier concentration and reduces the impact of band tailing. The average power conversion efficiency (PCE) of the devices improved from 7.45% to 9.26%, the PCE of the best‐performing CZTSSe solar cells increased from 9.25% to 9.83%, and the consistency among the devices is further enhanced, as indicated by a reduction in the standard deviation from 0.98 to 0.44. Ultimately, the device performance of the Cu2++Sn2+‐DMF system improved by 11.01% (without the MgF2 layer) after optimization. This study serves as a reference for regulating the environment of the CZTS‐PS to further enhance the CZTSSe devices' performance, and the photoelectric conversion efficiency is improved by ≈30%.
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Research context

OpenAlex topics: Chalcogenide Semiconductor Thin Films · Quantum Dots Synthesis And Properties · Copper-based nanomaterials and applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

School of Physical Science and Technology Inner Mongolia University Hohhot 010021 P. R. China

Key Laboratory of Semiconductor Photovoltaic Technology and Energy Materials of Inner Mongolia Autonomous Region Hohhot 010021 P. R. China

Funding

National Natural Science Foundation of China

References (46)

Show source-provided references
1. 10.1002/advs.20200431310.1002/advs.202004313 ↗
2. 10.1016/j.jechem.2020.03.00710.1016/j.jechem.2020.03.007 ↗
3. 10.1002/adma.20160694510.1002/adma.201606945 ↗
4. 10.1088/1402-4896/acdc6510.1088/1402-4896/acdc65 ↗
5. 10.1016/j.rser.2007.11.01210.1016/j.rser.2007.11.012 ↗
6. Du Y. · Adv. Funct. Mater. · 2021 · 31
7. 10.1038/s41467-021-23343-110.1038/s41467-021-23343-1 ↗
8. 10.1016/j.tsf.2012.12.08910.1016/j.tsf.2012.12.089 ↗
9. 10.1002/adma.20220285810.1002/adma.202202858 ↗
10. 10.1038/s41560-018-0206-010.1038/s41560-018-0206-0 ↗
11. 10.1016/j.tsf.2006.12.10310.1016/j.tsf.2006.12.103 ↗
12. 10.1002/aenm.20150071210.1002/aenm.201500712 ↗
13. 10.1039/D1TA09024K10.1039/D1TA09024K ↗
14. 10.1002/pip.383110.1002/pip.3831 ↗
15. 10.1088/1674-1056/ac9b3a10.1088/1674-1056/ac9b3a ↗
16. 10.1002/adfm.20230345910.1002/adfm.202303459 ↗
17. 10.1021/acsami.8b1074910.1021/acsami.8b10749 ↗
18. 10.1039/C6GC02489K10.1039/C6GC02489K ↗
19. 10.1039/C5RA23015B10.1039/C5RA23015B ↗
20. 10.1007/s40843-020-1408-x10.1007/s40843-020-1408-x ↗
21. 10.1038/s41560-023-01251-610.1038/s41560-023-01251-6 ↗
22. 10.1021/acsami.5b1139710.1021/acsami.5b11397 ↗
23. 10.1021/acsami.6b0520110.1021/acsami.6b05201 ↗
24. 10.1021/acsami.6b0008110.1021/acsami.6b00081 ↗
25. 10.1039/C4GC01828A10.1039/C4GC01828A ↗
26. 10.1016/j.solmat.2016.02.00210.1016/j.solmat.2016.02.002 ↗
27. 10.1021/acsami.0c1693610.1021/acsami.0c16936 ↗
28. 10.1016/j.nanoen.2019.10443810.1016/j.nanoen.2019.104438 ↗
29. 10.1016/j.solener.2017.10.08510.1016/j.solener.2017.10.085 ↗
30. 10.1063/1.177288510.1063/1.1772885 ↗
31. Yu Q. · Nat. Energy · 2020 · 76
32. 10.1021/acsami.0c0262910.1021/acsami.0c02629 ↗
33. 10.1016/j.solmat.2020.11052210.1016/j.solmat.2020.110522 ↗
34. Jeong W. L. · Nanomaterials · 2021 · 11
35. 10.1002/advs.20220124110.1002/advs.202201241 ↗
36. 10.1002/aenm.20210229810.1002/aenm.202102298 ↗
37. 10.1021/acsaem.8b0224710.1021/acsaem.8b02247 ↗
38. 10.1002/smll.20210504410.1002/smll.202105044 ↗
39. 10.1021/acsenergylett.7b0012910.1021/acsenergylett.7b00129 ↗
40. 10.1063/1.493948710.1063/1.4939487 ↗
41. 10.1021/acsaem.0c0092610.1021/acsaem.0c00926 ↗
42. 10.1002/adfm.20231199210.1002/adfm.202311992 ↗
43. 10.1002/adma.20230773310.1002/adma.202307733 ↗
44. 10.1002/adfm.20221055110.1002/adfm.202210551 ↗
45. 10.1002/adma.20120314610.1002/adma.201203146 ↗
46. 10.1002/aenm.20110063010.1002/aenm.201100630 ↗