journal article·2022-11

Low‐Energy Hydrogen Ions Enable Efficient Room‐Temperature and Rapid Plasma Hydrogenation of TiO2 Nanorods for Enhanced Photoelectrochemical Activity

Xiaodan Wang, Leonhard Mayrhofer, Martin Keunecke, Sonia Estrade, Lluis Lopez‐Conesa, Michael Moseler, Andreas Waag, Lothar Schaefer, Weidong Shi, Xiangjian Meng, Junhao Chu, Zhiyong Fan, Hao Shen

Small· Volume 18· Issue 46
Publisher page

Abstract

Abstract Hydrogenation is a promising technique to prepare black TiO2 (H‐TiO2) for solar water splitting, however, there remain limitations such as severe preparation conditions and underexplored hydrogenation mechanisms to inefficient hydrogenation and poor photoelectrochemical (PEC) performance to be overcome for practical applications. Here, a room‐temperature and rapid plasma hydrogenation (RRPH) strategy that realizes low‐energy hydrogen ions of below 250 eV to fabricate H‐TiO2 nanorods with controllable disordered shell, outperforming incumbent hydrogenations, is reported. The mechanisms of efficient RRPH and enhanced PEC activity are experimentally and theoretically unraveled. It is discovered that low‐energy hydrogen ions with fast subsurface transport kinetics and shallow penetration depth features, enable them to directly penetrate TiO2 via unique multiple penetration pathways to form controllable disordered shell and suppress bulk defects, ultimately leading to improved PEC performance. Furthermore, the hydrogenation‐property experiments reveal that the enhanced PEC activity is mainly ascribed to increasing band bending and bulk defect suppression, compared to reported H‐TiO2, a superior photocurrent density of 2.55 mA cm−2 at 1.23 VRHE is achieved. These findings demonstrate a sustainable strategy which offers great promise of TiO2 and other oxides to achieve further‐improved material properties for broad practical applications.
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Research context

OpenAlex topics: Advanced Photocatalysis Techniques · Copper-based nanomaterials and applications · ZnO doping and properties

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Fraunhofer Institute for Surface Engineering and Thin Films Bienroder Weg 54E 38108 Braunschweig Germany

Fraunhofer Institute for Mechanics of Materials IWM Wöhlerstraße 11 79108 Freiburg Germany

Department d'Electrònica Universitat de Barcelona c/Martí Franquès 1 Barcelona 08028 Spain

Institute for Semiconductor Technology TU Braunschweig Hans‐Sommer‐Strasse 66 38106 Braunschweig Germany

School of Chemistry and Chemical Engineering Jiangsu University Xuefu Road 301 Zhenjiang 212013 China

Shanghai Institute of Technical Physics Chinese Academy of Sciences Yu Tian Road 500 Shanghai 200083 China

Institute of Optoelectronics Fudan University Song Hu Road 2005 Shanghai 200438 China

Department of Electronic and Computer Engineering The Hong Kong University of Science and Technology Clear Water Bay Kowloon Hong Kong SAR 999077 China

Funding

Hong Kong University of Science and Technology · Universitat de Barcelona

References (40)

Show source-provided references
1. 10.1002/aenm.20160045210.1002/aenm.201600452 ↗
2. 10.1002/aenm.20200330310.1002/aenm.202003303 ↗
3. 10.1002/adma.20210040710.1002/adma.202100407 ↗
4. 10.1126/science.120044810.1126/science.1200448 ↗
5. 10.1021/nl201766h10.1021/nl201766h ↗
6. 10.1002/aenm.20190072510.1002/aenm.201900725 ↗
7. 10.1002/aenm.20190128710.1002/aenm.201901287 ↗
8. 10.1016/j.cej.2021.13293610.1016/j.cej.2021.132936 ↗
9. 10.1016/j.jechem.2021.11.02410.1016/j.jechem.2021.11.024 ↗
10. 10.1039/D1TC02816B10.1039/D1TC02816B ↗
11. 10.1016/j.cej.2019.12226610.1016/j.cej.2019.122266 ↗
12. 10.1021/acsami.8b1826110.1021/acsami.8b18261 ↗
13. 10.1002/adma.20160049510.1002/adma.201600495 ↗
14. 10.1039/C6EE00830E10.1039/C6EE00830E ↗
15. 10.1021/jacs.0c0056110.1021/jacs.0c00561 ↗
16. 10.1016/j.matt.2021.10.02710.1016/j.matt.2021.10.027 ↗
17. 10.1002/adfm.20130048610.1002/adfm.201300486 ↗
18. 10.1021/acs.jpcc.5b0276710.1021/acs.jpcc.5b02767 ↗
19. 10.1016/j.jpowsour.2016.06.07410.1016/j.jpowsour.2016.06.074 ↗
20. 10.1016/j.nanoen.2017.10.06210.1016/j.nanoen.2017.10.062 ↗
21. 10.1016/j.ceramint.2020.04.08510.1016/j.ceramint.2020.04.085 ↗
22. 10.1021/cr200148b10.1021/cr200148b ↗
23. 10.1007/s11090-015-9683-010.1007/s11090-015-9683-0 ↗
24. 10.1063/1.479437510.1063/1.4794375 ↗
25. 10.1063/1.490122610.1063/1.4901226 ↗
26. 10.1103/PhysRevA.70.05271610.1103/PhysRevA.70.052716 ↗
27. 10.1021/acs.jpcc.8b0943410.1021/acs.jpcc.8b09434 ↗
28. 10.1038/nature1765310.1038/nature17653 ↗
29. 10.1038/nmat469210.1038/nmat4692 ↗
30. 10.1038/s41467-021-21807-y10.1038/s41467-021-21807-y ↗
31. 10.1021/nl802096a10.1021/nl802096a ↗
32. 10.1103/PhysRevB.54.1116910.1103/PhysRevB.54.11169 ↗
33. 10.1103/PhysRevB.59.175810.1103/PhysRevB.59.1758 ↗
34. 10.1103/PhysRevB.50.1795310.1103/PhysRevB.50.17953 ↗
35. 10.1103/PhysRevB.57.150510.1103/PhysRevB.57.1505 ↗
36. 10.1103/PhysRevLett.77.386510.1103/PhysRevLett.77.3865 ↗
37. 10.1016/j.susc.2007.08.02510.1016/j.susc.2007.08.025 ↗
38. 10.1088/0957-4484/20/26/26402010.1088/0957-4484/20/26/264020 ↗
39. 10.1088/1361-648X/aa680e10.1088/1361-648X/aa680e ↗
40. 10.1021/acs.jpclett.1c0285010.1021/acs.jpclett.1c02850 ↗