journal article·2023-07

Deterministic Magnetic Switching in Perpendicular Magnetic Trilayers Through Sunlight‐Induced Photoelectron Injection

Meng Zhao, Lei Wang, Yifan Zhao, Yujing Du, Zhexi He, Kai Chen, Zhenlin Luo, Wensheng Yan, Qian Li, Chenying Wang, Zhuangde Jiang, Ming Liu, Ziyao Zhou

Small· Volume 19· Issue 28
Publisher page

Abstract

Abstract Finding an energy‐efficient way of switching magnetization is crucial in spintronic devices, such as memories. Usually, spins are manipulated by spin‐polarized currents or voltages in various ferromagnetic heterostructures; however, their energy consumption is relatively large. Here, a sunlight control of perpendicular magnetic anisotropy (PMA) in Pt (0.8 nm)/Co (0.65 nm)/Pt (2.5 nm)/PN Si heterojunction in an energy‐efficient manner is proposed. The coercive field (HC) is altered from 261 to 95 Oe (64% variation) under sunlight illumination, enabling a nearly 180° deterministic magnetization switching reversibly with a 140 Oe magnetic bias assistant. The element‐resolved X‐ray circular dichroism measurement reveals different L3 and L2 edge signals of the Co layer with or without sunlight, suggesting a photoelectron‐induced redistribution of the orbital and spin moment in Co magnetization. The first‐principle calculations also reveal that the photo‐induced electrons shift the Fermi level of electrons and enhance the in‐plane Rashba field around the Co/Pt interfaces, leading to a weakened PMA and corresponding HC decreasing and magnetization switching accordingly. The sunlight control of PMA may provide an alternative way for magnetic recording, which is energy efficient and would reduce the Joule heat from the high switching current.
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Research context

OpenAlex topics: Magnetic properties of thin films · Magnetic and transport properties of perovskites and related materials · ZnO doping and properties

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Electronic Materials Research Laboratory Key Laboratory of the Ministry of Education & International Center for Dielectric Research School of Electronic Science and Engineering State Key Laboratory for Manufacturing Systems Engineering The International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology Xi'an Jiaotong University Xi'an 710049 China

Center for Spintronics and Quantum Systems State Key Laboratory for Mechanical Behavior of Materials Xi'an Jiaotong University No. 28 Xianning West Road Xi'an Shaanxi 710049 China

National Synchrotron Radiation Laboratory University of Science and Technology of China Hefei Anhui 230029 China

State Key Laboratory for Manufacturing Systems Engineering Collaborative Innovation Center of High‐End Manufacturing Equipment The International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology Xi'an Jiaotong University Xi'an 710049 China

Funding

National Natural Science Foundation of China · Higher Education Discipline Innovation Project · China Postdoctoral Science Foundation · International Joint Laboratory for MicroNano Manufacturing and Measurement Technologies

References (55)

Show source-provided references
1. 10.1038/nmat331110.1038/nmat3311 ↗
2. 10.1038/nphys78410.1038/nphys784 ↗
3. 10.1038/nphys61910.1038/nphys619 ↗
4. 10.1038/nature2238910.1038/nature22389 ↗
5. 10.1002/adma.20150282410.1002/adma.201502824 ↗
6. 10.1126/science.106538910.1126/science.1065389 ↗
7. 10.1038/nmat313010.1038/nmat3130 ↗
8. 10.1038/ncomms166610.1038/ncomms1666 ↗
9. 10.1002/adma.20140277410.1002/adma.201402774 ↗
10. 10.1038/s41563-018-0275-210.1038/s41563-018-0275-2 ↗
11. 10.1038/nmat331110.1038/nmat3311 ↗
12. 10.1038/nmat436010.1038/nmat4360 ↗
13. 10.1103/PhysRevLett.109.09660210.1103/PhysRevLett.109.096602 ↗
14. 10.1126/science.aau791310.1126/science.aau7913 ↗
15. 10.1002/adma.20180535510.1002/adma.201805355 ↗
16. 10.1038/nnano.2013.4310.1038/nnano.2013.43 ↗
17. 10.1103/PhysRevLett.113.26660210.1103/PhysRevLett.113.266602 ↗
18. 10.1103/PhysRevApplied.13.04407810.1103/PhysRevApplied.13.044078 ↗
19. 10.1002/adma.20190714810.1002/adma.201907148 ↗
20. 10.1038/s41586-018-0770-210.1038/s41586-018-0770-2 ↗
21. 10.1038/s41928-019-0273-710.1038/s41928-019-0273-7 ↗
22. 10.1038/s41563-018-0149-710.1038/s41563-018-0149-7 ↗
23. 10.1126/science.125674210.1126/science.1256742 ↗
24. 10.1103/PhysRevB.87.17442710.1103/PhysRevB.87.174427 ↗
25. 10.1038/nnano.2011.1910.1038/nnano.2011.19 ↗
26. 10.1002/adma.20190380010.1002/adma.201903800 ↗
27. 10.1038/s41578-019-0146-810.1038/s41578-019-0146-8 ↗
28. 10.1126/sciadv.aaw890410.1126/sciadv.aaw8904 ↗
29. 10.1038/natrevmats.2016.5510.1038/natrevmats.2016.55 ↗
30. 10.1002/adma.20210252510.1002/adma.202102525 ↗
31. 10.1002/adma.20180666210.1002/adma.201806662 ↗
32. 10.1002/adma.20170390810.1002/adma.201703908 ↗
33. 10.1038/nmat413410.1038/nmat4134 ↗
34. 10.1002/adma.20180163910.1002/adma.201801639 ↗
35. 10.1103/PhysRevB.99.22441610.1103/PhysRevB.99.224416 ↗
36. 10.1038/nmat317110.1038/nmat3171 ↗
37. 10.1109/TNANO.2015.246233710.1109/TNANO.2015.2462337 ↗
38. 10.1021/acsnano.8b0309710.1021/acsnano.8b03097 ↗
39. 10.1038/s41928-018-0160-710.1038/s41928-018-0160-7 ↗
40. Kirilyuk A. · Philos. Trans. A: Math. Phys. Eng. Sci. · 2011 · 369 · 363110.1098/rsta.2011.0168 ↗
41. 10.1103/PhysRevLett.99.04760110.1103/PhysRevLett.99.047601 ↗
42. 10.1063/1.475910910.1063/1.4759109 ↗
43. 10.1103/PhysRevLett.94.23760110.1103/PhysRevLett.94.237601 ↗
44. 10.1002/advs.20190199410.1002/advs.201901994 ↗
45. 10.1002/adfm.20211165210.1002/adfm.202111652 ↗
46. 10.1038/ncomms1340610.1038/ncomms13406 ↗
47. 10.1116/1.479478910.1116/1.4794789 ↗
48. 10.1016/S0304-8853(99)00407-210.1016/S0304-8853(99)00407-2 ↗
49. 10.1103/PhysRevLett.75.15210.1103/PhysRevLett.75.152 ↗
50. 10.1103/PhysRevB.47.55810.1103/PhysRevB.47.558 ↗
51. 10.1103/PhysRevB.54.1116910.1103/PhysRevB.54.11169 ↗
52. 10.1103/PhysRevB.50.1795310.1103/PhysRevB.50.17953 ↗
53. 10.1103/PhysRevB.59.175810.1103/PhysRevB.59.1758 ↗
54. 10.1139/p80-15910.1139/p80-159 ↗
55. 10.1103/PhysRevB.13.518810.1103/PhysRevB.13.5188 ↗