journal article·2023-08

Concentration Phase Separation of Substitution‐Doped Atoms in TMDCs Monolayer

Shuang Wang, Degong Ding, Pai Li, Yanping Sui, Guanyu Liu, Sunwen Zhao, Runhan Xiao, Chuang Tian, Zhiying Chen, Haomin Wang, Chen Chen, Gang Mu, Yixin Liu, Yanhui Zhang, Chuanhong Jin, Feng Ding, Guanghui Yu

Small· Volume 19· Issue 32
Publisher page

Abstract

Abstract The density and spatial distribution of substituted dopants affect the transition metal dichalcogenides (TMDCs) materials properties. Previous studies have demonstrated that the density of dopants in TMDCs increases with the amount of doping, and the phenomenon of doping concentration difference between the nucleation center and the edge is observed, but the spatial distribution law of doping atoms has not been carefully studied. Here, it is demonstrated that the spatial distribution of dopants changes at high doping concentrations. The spontaneous formation of an interface with a steep doping concentration change is named concentration phase separation (CPS). The difference in the spatial distribution of dopants on both sides of the interface can be identified by an optical microscope. This is consistent with the results of spectral analysis and microstructure characterization of scanning transmission electron microscope. According to the calculation results of density functional theory, the chemical potential has two relatively stable energies as the doping concentration increases, which leads to the spontaneous formation of CPS. Understanding the abnormal phenomena is important for the design of TMDCs devices. This work has great significance in the establishment and improvement of the doping theory and the design of the doping process for 2D materials.
Source: crossref · Quality: baseline

Research context

OpenAlex topics: 2D Materials and Applications · ZnO doping and properties · Quantum Dots Synthesis And Properties

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai 200050 China

Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences Beijing 100049 China

State Key Laboratory of Silicon Materials and School of Materials Science and Engineering Zhejiang University Hangzhou Zhejiang 310027 China

State Key Laboratory of Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Sciences Shanghai 200083 China

Faculty of Materials Science and Engineering/Institute of Technology for Carbon Neutrality Shenzhen Institute of Advanced Technology Chinese Academy of Sciences 1068 Xueyuan Blvd Shenzhen 518055 China

Funding

Science and Technology Commission of Shanghai Municipality · National Natural Science Foundation of China

References (41)

Show source-provided references
1. 10.1002/adma.20150640210.1002/adma.201506402 ↗
2. 10.1002/adma.20220088510.1002/adma.202200885 ↗
3. 10.1002/adma.20180299110.1002/adma.201802991 ↗
4. 10.1146/annurev-physchem-042018-05262810.1146/annurev-physchem-042018-052628 ↗
5. Kormányos A. · Phys. Rev. X · 2014 · 4
6. 10.1002/adma.20170375410.1002/adma.201703754 ↗
7. 10.1002/adma.20180347710.1002/adma.201803477 ↗
8. 10.1002/adma.20200360710.1002/adma.202003607 ↗
9. 10.1002/advs.20190307610.1002/advs.201903076 ↗
10. 10.1002/advs.20200108010.1002/advs.202001080 ↗
11. 10.1002/advs.20200117410.1002/advs.202001174 ↗
12. 10.1002/advs.20217005910.1002/advs.202170059 ↗
13. 10.1002/adma.20160110410.1002/adma.201601104 ↗
14. 10.1002/adma.20190653610.1002/adma.201906536 ↗
15. 10.1021/acsnano.9b0557410.1021/acsnano.9b05574 ↗
16. 10.1021/acsnano.9b0985710.1021/acsnano.9b09857 ↗
17. 10.1038/s41467-021-20951-910.1038/s41467-021-20951-9 ↗
18. 10.1143/JJAP.38.L22310.1143/JJAP.38.L223 ↗
19. 10.1016/S0022-0248(99)00242-010.1016/S0022-0248(99)00242-0 ↗
20. 10.1149/1.212893510.1149/1.2128935 ↗
21. 10.1149/1.213279110.1149/1.2132791 ↗
22. 10.1016/j.jcrysgro.2003.12.03510.1016/j.jcrysgro.2003.12.035 ↗
23. 10.1016/j.jcrysgro.2011.12.07010.1016/j.jcrysgro.2011.12.070 ↗
24. 10.1016/S0921-5107(99)00498-510.1016/S0921-5107(99)00498-5 ↗
25. 10.1016/S0921-5107(99)00494-810.1016/S0921-5107(99)00494-8 ↗
26. 10.1063/1.175388310.1063/1.1753883 ↗
27. 10.1063/1.33317810.1063/1.333178 ↗
28. 10.1021/acs.nanolett.6b0307510.1021/acs.nanolett.6b03075 ↗
29. 10.1002/smll.20220580010.1002/smll.202205800 ↗
30. 10.1002/smll.20110101610.1002/smll.201101016 ↗
31. 10.1002/adma.20170220610.1002/adma.201702206 ↗
32. 10.1021/acsnano.1c0164310.1021/acsnano.1c01643 ↗
33. 10.1021/acsnano.5b0085210.1021/acsnano.5b00852 ↗
34. 10.1021/acsanm.2c0418910.1021/acsanm.2c04189 ↗
35. 10.1021/jacs.0c0569110.1021/jacs.0c05691 ↗
36. 10.1103/PhysRevB.54.1116910.1103/PhysRevB.54.11169 ↗
37. 10.1016/0927-0256(96)00008-010.1016/0927-0256(96)00008-0 ↗
38. 10.1103/PhysRevLett.77.386510.1103/PhysRevLett.77.3865 ↗
39. 10.1063/1.338234410.1063/1.3382344 ↗
40. 10.1002/jcc.2160010.1002/jcc.21600 ↗
41. 10.1103/PhysRevB.50.1795310.1103/PhysRevB.50.17953 ↗