Preferential Orientation of a Chiral Semiconducting Carbon Nanotube on the Locally Depassivated Si(100)‐2×1:H Surface Identified by Scanning Tunneling Microscopy

Patterns can promote the locally enhanced binding of a semiconducting single-walled carbon nanotube (SWNT) in a preferential alignment on the Si(100) platform. The figure shows a three-dimensional rendering of a 30 nm×30 nm image of a SWNT traversing a 4-nm-wide stripe of atomically clean silicon lithographically patterned on the Si(100)-2×1:H surface using an ultrahigh-vacuum scanning tunneling microscope.