Towards Perfectly Ordered Novel ZnO/Si Nano‐Heterojunction Arrays
Source abstract
Abstract
The fabrication of a highly ordered novel ZnO/Si nano‐heterojuntion array is introduced. ZnO seed layer is first deposited on the Si (P<111>) surface. The nucleation sites are then defined by patterning the surface through focused ion beam (FIB) system. The ZnO nanorods are grown on the nucleation sites through hydrothermal process. The whole fabrication process is simple, facile and offers direct control of the space, length and aspect ratio of the array. It is found that ZnO/Si nanojunctions show an improved interface when subjected to heat treatment. The recrystallization of ZnO and the tensile lattice strain of Si developed during the heating process contribute the enhancement of their photoresponses to white light. The photoluminescence (PL) measurement result of nano‐heterojunction arrays with different parameters is discussed.
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Research context
OpenAlex topics: ZnO doping and properties · Nanowire Synthesis and Applications · Ga2O3 and related materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
School of Materials Science and Engineering Nanyang Technological University 50 Nanyang Avenue 639798 Singapore
School of Mechanical and Aerospace Engineering Nanyang Technological University 50 Nanyang Avenue 639798 Singapore
Institute of Advanced Materials and Technology University of Science and Technology Beijing Beijing 100083 China
School of Physical and Mathematical Sciences Nanyang Technological University 50 Nanyang Avenue 639798 Singapore
College of Science Inner Mongolia University of Technology Hohhot 010051 China
References (30)
Show source-provided references
1. 10.1126/science.293.5529.46810.1126/science.293.5529.468 ↗
2. 10.1021/nl015651n10.1021/nl015651n ↗
3. 10.1021/nl035002710.1021/nl0350027 ↗
4. 10.1063/1.150487710.1063/1.1504877 ↗
5. 10.1088/0957-4484/17/9/03310.1088/0957-4484/17/9/033 ↗
6. 10.1063/1.356260810.1063/1.3562608 ↗
7. 10.1038/1994110.1038/19941 ↗
8. 10.1038/415617a10.1038/415617a ↗
9. 10.1021/nl015688810.1021/nl0156888 ↗
10. 10.1016/j.micron.2005.10.01610.1016/j.micron.2005.10.016 ↗
11. 10.1016/j.solmat.2006.03.03510.1016/j.solmat.2006.03.035 ↗
12. 10.1021/nl035102c10.1021/nl035102c ↗
13. 10.1126/science.106036710.1126/science.1060367 ↗
14. 10.1073/pnas.100824010710.1073/pnas.1008240107 ↗
15. 10.1063/1.165568510.1063/1.1655685 ↗
16. 10.1021/ja050807x10.1021/ja050807x ↗
17. 10.1039/b816034a10.1039/b816034a ↗
18. 10.1088/0957-4484/21/47/47570310.1088/0957-4484/21/47/475703 ↗
19. 10.1063/1.308209610.1063/1.3082096 ↗
20. 10.1063/1.218201710.1063/1.2182017 ↗
21. 10.1088/0957-4484/19/01/01530310.1088/0957-4484/19/01/015303 ↗
22. 10.1002/smll.20120062310.1002/smll.201200623 ↗
23. 10.1088/0957-4484/24/17/17530110.1088/0957-4484/24/17/175301 ↗
24. 10.1039/ft990860095910.1039/ft9908600959 ↗
25. 10.1046/j.1365-2818.2002.01050.x10.1046/j.1365-2818.2002.01050.x ↗
26. 10.1126/science.110073110.1126/science.1100731 ↗
27. 10.1063/1.36305210.1063/1.363052 ↗
28. 10.1063/1.199266610.1063/1.1992666 ↗
29. 10.1063/1.172369610.1063/1.1723696 ↗
30. 10.1103/PhysRevB.69.24540110.1103/PhysRevB.69.245401 ↗