Micrometer to 15 nm Printing of Metallic Inks with Fountain Pen Nanolithography
Source abstract
Abstract
Abstract The field of printed electronics is continually trying to reduce the dimensions of the electrical components. Here, a method of printing metallic lines with widths as small as 15 nm and up to a few micrometers using fountain pen nanolithography (FPN) is shown. The FPN technique is based on a bent nanopipette with atomic force feedback that acts similar to a nanopen. The geometry of the nanopen allows for rapid placement accuracy of the printing tip, on any desired location, with the highest of optical sub‐micrometer resolution. Using this nanopen, investigations of various inks are undertaken together with instrumental and script‐tool development that allows accurate printing of multiple layers. This has led to the printing of conductive lines using inks composed of silver nanoparticles and salt solutions of silver and copper. In addition, it is shown that the method can be applied to substrates of various materials with minimal effect on the dimension of the line. The line widths are varied by using nanopens with different orifices or by tailoring the wetting properties of the ink on the substrate. Metallic interconnections of conducting lines are reported.
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Research context
OpenAlex topics: Nanofabrication and Lithography Techniques · Force Microscopy Techniques and Applications · Nanomaterials and Printing Technologies
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Applied Physics Selim and Rachel Benin School of Engineering and Computer Science The Hebrew University Givat Ram Jerusalem 9190401 Israel
School of Materials Science and Engineering Nanyang Technological University Nanyang Avenue 50 639798 Singapore
Leibniz Institute of Photonic Technology A. Einstein 9 Jena 07745 Germany
Casali Center for Applied Chemistry Institute of Chemistry The Hebrew University Givat Ram Jerusalem 9190401 Israel
Funding
Ministry of Defense
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