journal article·2025-12

Sulfur‐Assisted One‐Pot Synthesis of Ultrathin Rhombus‐Shaped Bi 2 S 3 Nanosheets for Flexible NIR Photodetectors

Suhun Jo, Chanwon Park, Hyejin Rhyu, Myung Hyun Kang, Wooseok Song, Sun Sook Lee, Jongsun Lim, Sung Myung

Small· Volume 21· Issue 48
Publisher page

Abstract

Abstract A sulfur‐assisted one‐pot strategy is developed to synthesize ultrathin bismuth sulfide (Bi 2 S 3 ) nanosheets, enabling high‐performance flexible photodetectors. By tuning the sulfur content, the resulting morphology can be controlled to yield either bulk structures or nanosheets. The synthesized Bi 2 S 3 nanosheets exhibit a uniform thickness of ≈86 nm and a narrow bandgap of 1.24 eV, enabling broadband light absorption from the ultraviolet (UV) to the infrared (IR) regions. A flexible photodetector is fabricated by uniformly spray‐coating the Bi 2 S 3 dispersion onto a PDMS substrate. Under 980 nm Near‐IR (NIR) illumination, the device demonstrates a photocurrent of 61.2 µA, a responsivity ( R ) of 0.95 A W −1 , a detectivity ( D * ) of 1.4 × 10 12 Jones, and an external quantum efficiency (EQE) of 120%. The device also exhibits excellent operational stability, maintaining its initial photocurrent over 650 illumination cycles. It maintains 92% of its photocurrent under bending radii of 12, 10, and 8 mm, and retains ≈90% of its original performance after 20 000 bending cycles at a radius of 8 mm. These results demonstrate that morphology‐controlled Bi 2 S 3 nanosheets effectively mitigate brittleness, providing both enhanced mechanical flexibility and reliable photodetection performance.
Source: crossref · Quality: baseline

Research context

OpenAlex topics: Chalcogenide Semiconductor Thin Films · 2D Materials and Applications · Perovskite Materials and Applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Thin Film Materials Research Group Korea Research Institute of Chemical Technology Daejeon 34114 SouthKorea

Funding

Ministry of Science and ICT, South Korea

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